Semiconductor memory devices

ABSTRACT

A semiconductor memory device including a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer between the first and second semiconductor layers, gate electrodes arranged on the second semiconductor layer and spaced apart from each other in a first direction perpendicular to an upper surface of the second semiconductor layer, and channel structures penetrating the first, second and third semiconductor layers and the gate electrodes, each respective channel structure of channel structures including a gate insulating film, a channel layer, and a buried insulating film, the gate insulating film including a tunnel insulating film adjacent to the channel layer, a charge blocking film adjacent to the gate electrodes, and a charge storage film between the tunnel insulating film and the charge blocking film, and the charge storage film including an upper cover protruding toward the outside of the respective channel structure.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation application of U.S. application Ser.No. 16/690,929, filed on Nov. 21, 2019, which claims priority to KoreanPatent Application No. 10-2019-0050984, filed on Apr. 30, 2019, in theKorean Intellectual Property Office, the disclosure of which isincorporated herein in its entirety by reference.

BACKGROUND

Some example embodiments relate to semiconductor memory devices. Moreparticularly, some example embodiments relate to semiconductor memorydevices in which the degree of integration is enhanced.

Recently, there has been a demand for large capacity and highlyintegrated semiconductor memory devices resulting frommultifunctionalization of information communication devices. As thedegree of integration of semiconductor memory devices increases, theinfluence of the process distribution on the performance ofsemiconductor memory devices is likewise increasing. Accordingly,various methods of controlling the process distribution in order toimprove the reliability of the semiconductor memory devices would bedesirable.

SUMMARY

Some example embodiments provide a semiconductor memory device and amanufacturing method thereof with improved reliability.

Some example embodiments are not limited to the above-mentioned tasks,and other tasks not mentioned may be clearly understood by those skilledin the art from the following description.

According to some example embodiments, there is provided a semiconductormemory device including a first semiconductor layer, a secondsemiconductor layer, and a third semiconductor layer between the firstand second semiconductor layers, a plurality of gate electrodes arrangedon the second semiconductor layer and spaced apart from each other in afirst direction perpendicular to an upper surface of the secondsemiconductor layer, and a plurality of channel structures penetratingthe first, second and third semiconductor layers and the plurality ofgate electrodes, each respective channel structure of the plurality ofchannel structures including a gate insulating film, a channel layer,and a buried insulating film, the gate insulating film including atunnel insulating film adjacent to the channel layer, a charge blockingfilm adjacent to the plurality of gate electrodes, and a charge storagefilm between the tunnel insulating film and the charge blocking film,and the charge storage film includes an upper cover protruding towardthe outside of the respective channel structure.

According to some example embodiments, there is provided a semiconductormemory device including a first semiconductor layer and a secondsemiconductor layer arranged on the first semiconductor layer, aplurality of gate electrodes arranged on the second semiconductor layerand spaced apart from each other in a first direction perpendicular toan upper surface of the second semiconductor layer, and a plurality ofchannel structures penetrating the first and second semiconductor layersand the plurality of gate electrodes in the first direction, each of theplurality of channel structures including a gate insulating film, achannel layer, and a buried insulating film, the channel layer beingconnected to the first semiconductor layer, and the gate insulating filmincluding an upper charge storage film in contact with a side surface ofthe second semiconductor layer.

According to some example embodiments, there is provided a semiconductormemory device including a first semiconductor layer, a secondsemiconductor layer on the first semiconductor layer, and a thirdsemiconductor layer between the first semiconductor layer and the secondsemiconductor layer, a plurality of gate electrodes spaced apart fromeach other in a first direction perpendicular to an upper surface of thesecond semiconductor layer, the plurality of gate electrodes forming aword line cut in the first direction that separates the plurality ofgate electrodes in a second direction perpendicular to the firstdirection, and a plurality of channel structures penetrating the secondand third semiconductor layers and the plurality of the gate electrodesin the first direction, each respective channel structure of theplurality of channel structures including a gate insulating film, achannel layer, and a buried insulating film, the third semiconductorlayer includes an opening that partially exposes an upper surface of thefirst semiconductor layer, the second semiconductor layer includes asupport connection structure in contact with the first semiconductorlayer at the opening, the gate insulating film including an upper tunnelinsulating film, an upper charge blocking film, and an upper chargestorage film between the upper tunnel insulating film and the uppercharge blocking film, and the upper charge storage film includes anupper cover protruding toward the outside of the respective channelstructure.

BRIEF DESCRIPTION OF THE DRAWINGS

Some example embodiments will be more clearly understood from thefollowing detailed description taken in conjunction with theaccompanying drawings in which:

FIG. 1A is a cross-sectional view for explaining a semiconductor memorydevice according to some example embodiments;

FIG. 1B is an enlarged partial cross-sectional view of a portion of FIG.1A;

FIGS. 2 and 3 are flowcharts for explaining a semiconductor memorydevice according to some example embodiments; and

FIGS. 4 to 13 are cross-sectional views for explaining a method ofmanufacturing a semiconductor memory device according to some exampleembodiments.

DETAILED DESCRIPTION

FIG. 1A is a cross-sectional view for explaining a semiconductor memorydevice 10 according to some example embodiments, and FIG. 1B is anenlarged partial cross-sectional view of a region E1 of FIG. 1A.

Referring to FIGS. 1A and 1B, the semiconductor memory device 10 mayinclude a conductive flat plate 200, a semiconductor layer 201 arrangedon the conductive flat plate 200, and/or insulating films 230 and gateelectrodes 240 alternately stacked on the semiconductor layer 201. Thesemiconductor memory device 10 may include first to third upperinsulating films 261, 263, and/or 265 (e.g., first upper insulating film261, second upper insulating film 263, and third upper insulating film265) arranged on a structure in which the insulating films 230 and thegate electrodes 240 are alternately stacked (e.g., a structureconstituting the alternately stacked insulating films 230 and gateelectrodes 240). According to some example embodiments, thesemiconductor memory device 10 may further include channel structures250 that penetrate the insulating films 230 and the gate electrodes 240,first and/or second bit line contact vias 271 and/or 273, an upperconductive pattern 281 (e.g., conductive structure and/or region),and/or a bit line BL, with which the channel structures 250 may operateas a memory cell array. According to some example embodiments, the gateelectrodes 240 include uppermost and second-uppermost gate electrodes240 (SE), a lowermost gate electrode 240 (GE), and several gateelectrodes 240 (WE) between the second-uppermost gate electrode 240 (SE)and the lowermost gate electrode 240 (GE).

According to some example embodiments, the conductive flat plate 200 maybe in the form of a flat plate. According to some example embodiments,the conductive flat plate 200 may include tungsten (W) or a tungsten (W)compound. Peripheral circuits may be formed below the conductive flatplate 200, and/or at a location horizontally apart (e.g., in the Yand/or X direction as illustrated in FIG. 1A) from a common source line.According to some example embodiments, the peripheral circuits mayinclude circuits for controlling the operation of semiconductor memorydevice 10, e.g., a control logic, a row decoder, a page buffer, and/orthe like. The conductive flat plate 200 may be formed on a semiconductorsubstrate such as a bulk silicon substrate, a silicon on insulator (SOI)substrate, a germanium substrate, a germanium on insulator (GOI)substrate, a silicon germanium substrate, and/or may be formed on anepitaxial thin film obtained by performing selective epitaxial growth(SEG).

According to some example embodiments, the semiconductor layer 201 maysupport the insulating films 230 and the gate electrodes 240. Accordingto some example embodiments, the semiconductor layer 201 may include,but is not limited to, a plurality of layers. For example, thesemiconductor layer may also include and/or constitute a single layer.

According to some example embodiments, the semiconductor layer 201 mayinclude a first semiconductor layer 201 a arranged on the conductiveflat plate 200, a second semiconductor layer 201 b arranged on the firstsemiconductor layer 201 a, and a third semiconductor layer 201 carranged between the first semiconductor layer 201 a and the secondsemiconductor layer 201 b. According to some example embodiments, thefirst semiconductor layer 201 a may be in contact with the thirdsemiconductor layer 201 c. According to some example embodiments, thethird semiconductor layer 201 c may be in contact with the secondsemiconductor layer 201 b. According to some example embodiments, thethird semiconductor layer 201 c may include an opening 201 op thatexposes a portion of an upper surface of the first semiconductor layer201 a. According to some example embodiments, the second semiconductorlayer 201 b may include a support connection structure 201 b 1 incontact with the first semiconductor layer 201 a through the opening 201op. According to some example embodiments, the first to thirdsemiconductor layers 201 a, 201 b, and 201 c may include polysilicon.According to some example embodiments, the first to third semiconductorlayers 201 a, 201 b, and 201 c may include doped polysilicon. Accordingto some example embodiments, the first to third semiconductor layers 201a, 201 b, and 201 c may be doped at the same or substantially the sameconcentration, but some example embodiments are not limited thereto.According to some example embodiments, when the first to thirdsemiconductor layers 201 a, 201 b, and 201 c are doped at the same orsubstantially the same concentration, the first to third semiconductorlayers 201 a, 201 b, and 201 c may be integrated into a single layer,but some example embodiments are not limited thereto. Even when thefirst to third semiconductor layers 201 a, 201 b, 201 c have the sameconcentration or substantially the same concentration, the first tothird semiconductor layers 201 a, 201 b, 201 c may also be distinguishedfrom each other. According to some example embodiments, the first tothird semiconductor layers 201 a, 201 b, 201 c may be separate layersdoped with different concentrations.

Herein, a direction perpendicular or substantially perpendicular to anupper surface of the semiconductor layer 201 is referred to as a firstdirection (a Z direction) and two directions parallel or substantiallyparallel to the upper surface of the semiconductor layer 201 arereferred to as second and third directions (an X direction and a Ydirection). The second and third directions (the X direction and Ydirection) may be perpendicular or substantially perpendicular to eachother. Herein, the term “vertical direction” may refer to a directionparallel or substantially parallel to the first direction (the Zdirection), and the term “vertical level” may refer to a height from areference plane (e.g., the upper surface of the semiconductor layer 201)in the first direction (the Z direction). In addition, the term“horizontal direction” may refer to the second direction (the Xdirection) or the third direction (the Y direction), or may refer to adirection perpendicular or substantially perpendicular to the firstdirection (the Z direction) and oblique to the second direction (the Xdirection) and the third direction (the Y direction). According to someexample embodiments, the X direction, Y direction, and/or Z directionmay also include a direction opposite thereto. Unless otherwise statedin all the following drawings, the definition of the directions is thesame as in FIG. 1A.

According to some example embodiments, the gate electrodes 240 and theinsulating films 230 may be alternately arranged in the first direction(the Z direction). According to some example embodiments, gateelectrodes 240 may be insulated from each other by the insulating films230 arranged therebetween. According to some example embodiments, thegate electrodes 240 of the same layer or similar layers may be separatedby a word line cut (WLC) and/or a string select line cut (SLC).According to some example embodiments, the gate electrodes 240 mayextend in the second direction (the X direction).

According to some example embodiments, the gate electrodes 240 mayinclude a conductive material. According to some example embodiments,the gate electrodes 240 may include, but are not limited to, tungsten,tantalum, cobalt, nickel, tungsten silicide, tantalum silicide, cobaltsilicide, and/or nickel silicide. According to some example embodiments,the gate electrodes 240 may also include polysilicon.

According to some example embodiments, the gate electrodes 240 may eachinclude a plurality of layers. According to some example embodiments,the gate electrodes 240 may each include a first barrier layer 241, asecond barrier layer 242, and/or a gate conductive layer 243. Accordingto some example embodiments, the first barrier layer 241, the secondbarrier layer 242, and the gate conductive layer 243 may each include adifferent material. According to some example embodiments, the first andsecond barrier layers 241 and 242 may have a constant thickness.According to some example embodiments, the first and second barrierlayers 241 and 242 may have a same thickness or a similar thickness toone another. According to some example embodiments, the first barrierlayer 241 may include, but is not limited to, metal oxide (e.g.,aluminum oxide), metal nitride, and/or metal oxynitride. According tosome example embodiments, the second barrier layer 242 may include, butis not limited to, titanium nitride. According to some exampleembodiments, the gate conductive layer 243 may include, but is notlimited to, tungsten.

According to some example embodiments, the first and second bit linecontact vias 271 and 273, the upper conductive pattern 281, and/or thebit line BL, which will be described below, may include any one or moreof the above materials of the gate electrodes 240 (e.g., tungsten,tantalum, cobalt, nickel, tungsten silicide, tantalum silicide, cobaltsilicide, and/or nickel silicide).

According to some example embodiments, the first to third upperinsulating films 261, 263, and 265 may be arranged on an uppermost gateelectrode 240(SE). The first to third upper insulating films 261, 263,and 265 may include an insulating material (e.g., silicon oxide and/orthe like).

According to some example embodiments, a plurality of channel structures250 may penetrate the first upper insulating film 261, the gateelectrodes 240, the insulating films 230, and/or the second and thirdsemiconductor layers 201 b and 201 c in the first direction (the Zdirection). According to some example embodiments, the plurality ofchannel structures 250 may be surrounded or partially surrounded by thefirst upper insulating film 261, the gate electrodes 240, the insulatingfilms 230, and/or the second and third semiconductor layers 201 b and201 c. According to some example embodiments, a bottom of the channelstructures 250 may be surrounded or partially surrounded by the firstsemiconductor layer 201 a. Thus, an upper surface of the channelstructures 250 may be coplanar or substantially coplanar with the firstupper insulating film 261 (e.g., with an upper surface of the firstupper insulating film 261) and a lower surface of the channel structures250 may be located at a lower level than an upper surface of the firstsemiconductor layer 201 a. Adjacent channel structures 250 may be spacedapart from each other at predetermined or determined intervals in thesecond and third directions (the X and Y directions).

According to some example embodiments, the channel structures 250 mayhave a high aspect ratio. According to some example embodiments, thechannel structures 250 may have a circular horizontal cross-sectionalshape or an approximately circular horizontal cross-sectional shape, butare not limited thereto. According to some example embodiments, thechannel structures 250 may include a tapered structure. Here, thechannel structures 250 having the tapered structure means that a widthof an upper portion of the channel structures 250 is greater than awidth of a lower portion thereof.

According to some example embodiments, each of the channel structures250 may include a plurality of layers. According to some exampleembodiments, the channel structures 250 may each include a gateinsulating film 251, a channel layer 253, and/or a buried insulatingfilm 255.

According to some example embodiments, the gate insulating film 251 mayconstitute a bottom surface and/or an outer side surface of each of thechannel structures 250. According to some example embodiments, the gateinsulating film 251 may insulate the channel layer 253 from the gateelectrodes 240.

According to some example embodiments, the gate insulating film 251 mayinclude a plurality of layers. According to some example embodiments,the gate insulating film 251 may include an upper gate insulating film251 u and a lower gate insulating film 251 d. According to some exampleembodiments, the upper gate insulating film 251 u and the lower gateinsulating film 251 d may be spaced apart from each other with the thirdsemiconductor layer 201 c therebetween. According to some exampleembodiments, the upper gate insulating film 251 u may include an uppertunnel insulating film 251 au, an upper charge storage film 251 bu,and/or an upper charge blocking film 251 cu. According to some exampleembodiments, the lower gate insulating film 251 d may include a lowertunnel insulating film 251 ad, a lower charge storage film 251 bd,and/or a lower charge blocking film 251 cd.

According to some example embodiments, the upper and lower tunnelinsulating films 251 au and 251 ad may include silicon oxide, hafniumoxide, aluminum oxide, zirconium oxide, tantalum oxide, and/or the like.According to some example embodiments, the upper and lower tunnelinsulating films 251 au and 251 ad may be formed by separating a tunnelinsulating film 251 a (see FIG. 7B) formed in a conformal form.

According to some example embodiments, the upper tunnel insulating film251 au may be in contact with the third semiconductor layer 201 c.According to some example embodiments, a lower surface of the uppertunnel insulating film 251 au may be in contact with the thirdsemiconductor layer 201 c. According to some example embodiments, a sidesurface of the upper tunnel insulating film 251 au may be in contactwith the channel layer 253 and/or the upper charge storage film 251 bu.According to some example embodiments, a first side surface of the uppertunnel insulating film 251 au may be in contact with the channel layer253 and a second side surface of the upper tunnel insulating film 251 aumay be in contact with the upper charge storage film 251 bu.

According to some example embodiments, the lower tunnel insulating film251 ad may be in contact with the third semiconductor layer 201 c.According to some example embodiments, an upper surface of the lowertunnel insulating film 251 ad may be in contact with the thirdsemiconductor layer 201 c. According to some example embodiments, a sidesurface of the lower tunnel insulating film 251 ad may be in contactwith the channel layer 253 and the lower charge storage film 251 bd.According to some example embodiments, a first side surface of the lowertunnel insulating film 251 ad may be in contact with the channel layer253 and a second side surface of the lower tunnel insulating film 251 admay be in contact with the lower charge storage film 251 bd.

According to some example embodiments, the upper and lower chargestorage films 251 bu and 251 bd may include silicon nitride, boronnitride, silicon boron nitride, and/or polysilicon doped withimpurities. According to some example embodiments, the upper and lowercharge storage films 251 bu and 251 bd may each include a materialhaving a high etch selectivity with respect to each of the upper andlower tunnel insulating films 251 au and 251 ad. For example, when theupper and lower tunnel insulating films 251 au and 251 ad includesilicon oxide, the upper and lower charge storage films 251 bu and 251bd may include silicon nitride, but are not limited thereto.

According to some example embodiments, the upper charge storage film 251bu may be a region in which electrons tunneling through the upper tunnelinsulating film 251 au from the channel layer 253 are stored. Accordingto some example embodiments, since the upper charge storage film 251 bumay be arranged at the same vertical level or a similar vertical levelas the gate electrodes 240, charges for data storage may be stored byapplying voltage to the gate electrodes 240. Since the lower chargestorage film 251 bd is arranged below the gate electrodes 240, chargesfor data storage may not be stored. According to some exampleembodiments, the upper and lower charge storage films 251 bu and 251 bdmay be formed by separating a charge storage film 251 b (see FIG. 7B)formed in a conformal form.

According to some example embodiments, the upper charge storage film 251bu may be between the upper tunnel insulating film 251 au and the uppercharge blocking film 251 cu. According to some example embodiments, theupper charge storage film 251 bu may be in contact with the upper tunnelinsulating film 251 au and the upper charge blocking film 251 cu.According to some example embodiments, the upper charge storage film 251bu may be in contact with the second and third semiconductor layers 201b and 201 c. According to some example embodiments, a lower surface ofthe upper charge storage film 251 bu may be in contact with the thirdsemiconductor layer 201 c.

According to some example embodiments, the upper charge storage film 251bu may include an upper cover 251 buc that protrudes horizontally towardthe second semiconductor layer 201 b at the same level (e.g., verticallevel) as or a similar level to the second semiconductor layer 201 b.The upper cover 251 buc may be distinguished by a broken line shown inFIG. 1B. According to some example embodiments, the upper cover 251 bucmay be a portion of the upper charge storage film 251 bu arranged belowthe upper charge blocking film 251 cu. According to some exampleembodiments, the upper cover 251 buc may be in contact with a sidesurface of the second semiconductor layer 201 b. According to someexample embodiments, the upper cover 251 buc may be between upper andlower surfaces of the second semiconductor layer 201 b (e.g., at avertical level between upper and lower surfaces of the secondsemiconductor layer 201 b). According to some example embodiments, theupper cover 251 buc may cover a lower surface of the upper chargeblocking film 251 cu. According to some example embodiments, the uppercover 251 buc may be in contact with the lower surface of the uppercharge blocking film 251 cu.

According to some example embodiments, the upper cover 251 buc mayprotrude outwardly from a center of each of the channel structures 250to have a generally circular symmetry, in a plan view. According to someexample embodiments, the upper charge storage film 251 bu may have amaximum or highest horizontal thickness (e.g., width) at the level(e.g., vertical level) at which the upper cover 251 buc is formed.According to some example embodiments, a portion of each of the uppertunnel insulating film 251 au, the upper charge storage film 251 bu, andthe upper charge blocking film 251 cu, which is farther from thesemiconductor layer 201 than the upper cover 251 buc, may have aconstant or substantially constant thickness (e.g., with respect to oneanother) in the first direction (the Z direction).

As described later in detail with respect to a method of manufacturingthe semiconductor memory device 10, the process distribution of theupper charge blocking film 251 cu may be controlled by the formation ofthe upper cover 251 buc. Accordingly, it may be possible to prevent orreduce the formation of a parasitic transistor that may cut off acurrent path through the channel layer 253, and thus, the reliability ofthe semiconductor memory device 10 may be improved.

According to some example embodiments, the lower charge storage film 251bd may be between the lower tunnel insulating film 251 ad and the lowercharge blocking film 251 cd. According to some example embodiments, thelower charge storage film 251 bd may be in contact with the lower tunnelinsulating film 251 ad and the lower charge blocking film 251 cd.According to some example embodiments, the lower charge storage film 251bd may be in contact with the first and third semiconductor layers 201 aand 201 c. According to some example embodiments, an upper surface ofthe lower charge storage film 251 bd may be in contact with the thirdsemiconductor layer 201 c.

According to some example embodiments, the lower charge storage film 251bd may include a lower cover 251 bdc that protrudes horizontally towardthe first semiconductor layer 201 a at the same level (e.g., verticallevel) as or a similar level to the first semiconductor layer 201 a. Thelower cover 251 bdc may be distinguished by a broken line shown in FIG.1B. According to some example embodiments, the lower cover 251 bdc maybe a portion of the lower charge storage film 251 bd arranged on thelower charge blocking film 251 cd. According to some exampleembodiments, the lower cover 251 bdc may be in contact with a sidesurface of the first semiconductor layer 201 a. According to someexample embodiments, the lower cover 251 bdc may be located below (e.g.,at a vertical level below) an upper surface of the first semiconductorlayer 201 a. According to some example embodiments, the lower cover 251bdc may cover an upper surface of the lower charge blocking film 251 cd.According to some example embodiments, the lower cover 251 bdc may be incontact with the upper surface of the lower charge blocking film 251 cd.

According to some example embodiments, the lower cover 251 bdc mayprotrude outwardly from the center of each of the channel structures 250to have a generally circular symmetry, in a plan view. In addition, thelower charge blocking film 251 cd may have a maximum or highesthorizontal thickness (e.g., width) at the level (e.g., vertical level)at which the lower cover 251 bdc is formed. According to some exampleembodiments, a portion of each of the lower tunnel insulating film 251ad, the lower charge storage film 251 bd, and the lower charge blockingfilm 251 cd, which are closer to the semiconductor layer 201 than theupper cover 251 buc, may have a constant or substantially constantthickness (e.g., with respect to one another) in the first direction(the Z direction).

According to some example embodiments, the upper and lower chargeblocking films 251 cu and 251 cd may include a single film or amultilayer film from among silicon oxide, silicon nitride, hafniumoxide, aluminum oxide, zirconium oxide, tantalum oxide, and/or the like.However, they are not limited thereto, and the upper and lower chargeblocking films 251 cu and 251 cd may include a dielectric materialhaving a high dielectric constant. According to some exampleembodiments, the upper and lower charge blocking films 251 cu and 251 cdmay include a material having a high etch selectivity with respect tothe upper and lower charge storage films 251 bu and 251 bd. For example,when the upper and lower charge storage films 251 bu and 251 bd includesilicon nitride, the upper and lower charge blocking films 251 cu and251 cd may include silicon oxide. According to some example embodiments,the upper and lower charge blocking films 251 cu and 251 cd may beformed by separating a charge blocking film 251 c (see FIG. 7B) formedin a conformal form.

According to some example embodiments, the upper charge blocking film251 cu and the lower charge blocking film 251 cd may define outerboundaries of the channel structures 250. According to some exampleembodiments, the upper charge blocking film 251 cu may be in contactwith the insulating films 230 and the gate electrodes 240. In somecases, the insulating films 230 and the upper charge blocking film 251cu may include the same or substantially the same material, and thus,the insulating films 230 and the upper charge blocking film 251 cu maybe integrated to form a continuous structure. However, they are notlimited thereto, and the insulating films 230 and the upper chargeblocking film 251 cu may include different materials, and thus, theinsulating films 230 and the upper charge blocking film 251 cu may beseparate from each other.

According to some example embodiments, an inner side surface of theupper charge blocking film 251 cu may be in contact with the uppercharge storage film 251 bu. According to some example embodiments, anouter side surface of the upper charge blocking film 251 cu may be incontact with the second semiconductor layer 201 b. Here, the inner sidesurface of the upper charge blocking film 251 cu may mean a side surfacemost adjacent to the channel layer 253 and the outer side surface of theupper charge blocking film 251 cu may mean a side surface most adjacentto the gate electrodes 240. According to some example embodiments, theupper charge blocking film 251 cu may be in contact with a side wall ofthe second semiconductor layer 201 b. According to some exampleembodiments, the upper charge blocking film 251 cu may be in contactwith only the second semiconductor layer 201 b (e.g., among the firstthrough third semiconductor layers 201 a, 201 b and 201 c). According tosome example embodiments, the upper charge blocking film 251 cu may notbe in contact with the third semiconductor layer 201 c. According tosome example embodiments, the upper charge blocking film 251 cu may bespaced apart from the third semiconductor layer 201 c with the uppercharge storage film 251 bu (more specifically, the upper cover 251 buc)therebetween.

According to some example embodiments, the lower charge blocking film251 cd may be in contact with the first semiconductor layer 201 a.According to some example embodiments, the lower charge blocking film251 cd may be in contact with a side wall of the first semiconductorlayer 201 a. According to some example embodiments, the lower chargeblocking film 251 cd may be in contact with only the first semiconductorlayer 201 a (e.g., among the first through third semiconductor layers201 a, 201 b and 201 c). According to some example embodiments, thelower charge blocking film 251 cd may not contact the thirdsemiconductor layer 201 c. According to some example embodiments, thelower charge blocking film 251 cd may be spaced apart from the thirdsemiconductor layer 201 c with the lower charge storage film 251 bd(more specifically, the lower cover 251 bdc) therebetween.

According to some example embodiments, a lower surface profile of eachof the upper tunnel insulating film 251 au, the upper charge storagefilm 251 bu, and the upper charge blocking film 251 cu may include around shape. However, it is not limited thereto, and a portion of thelower surface profiles of the upper tunnel insulating film 251 au, theupper charge storage film 251 bu, and the upper charge blocking film 251cu may include a linear shape or a polygonal shape. According to someexample embodiments, an upper surface profile of each of the lowertunnel insulating film 251 ad, the lower charge storage film 251 bd, andthe lower charge blocking film 251 cd may include a round shape.However, it is not limited thereto, and a portion of the upper surfaceprofiles of the lower tunnel insulating film 251 ad, the lower chargestorage film 251 bd, and the lower charge blocking film 251 cd mayinclude a linear shape or a polygonal shape.

According to some example embodiments, the third semiconductor layer 201c may be in contact with the channel layer 253. According to someexample embodiments, portions of the third semiconductor layer 201 cthat are in contact with the upper tunnel insulating film 251 au, theupper charge storage film 251 bu, the lower tunnel insulating film 251ad, and the lower charge storage film 251 bd may include a roundprofile, but are not limited thereto. As described later, the thirdsemiconductor layer 201 c may be formed by removing a portion of thegate insulating film 251 and a sacrificial semiconductor layer 202 (seeFIG. 5) and growing a semiconductor material (for example, polysilicon)on removed portions thereof. Therefore, the lower surface profiles ofthe upper tunnel insulating film 251 au and the upper charge storagefilm 251 bu, and the upper surface profiles of the lower tunnelinsulating film 251 ad and the lower charge storage film 251 bd may betransferred to the third semiconductor layer 201 c. Accordingly, thethird semiconductor layer 201 c may include any complementary profilecorresponding to the lower surface profiles of the upper tunnelinsulating film 251 au and the upper charge storage film 251 bu, and theupper surface profiles of the lower tunnel insulating film 251 ad andthe lower charge storage film 251 bd.

According to some example embodiments, the third semiconductor layer 201c may include two discontinuous positions on the lower and upper surfaceprofiles, since the third semiconductor layer 201 c may contact theupper and lower tunnel insulating films 251 au and 251 ad and the upperand lower charge storage films 251 bu and 251 bd, but the thirdsemiconductor layer 201 c may not contact the upper and lower chargeblocking films 251 cu and 251 cd. According to some example embodiments,a profile of the third semiconductor layer 201 c may be discontinuouslychanged at i) a boundary between the upper tunnel insulating film 251 auand the upper charge storage film 251 bu, ii) a boundary between theupper charge storage film 251 bu and the second semiconductor layer 201b, iii) a boundary between the lower tunnel insulating film 251 ad andthe lower charge storage film 251 bd, and iv) a boundary between thelower charge storage film 251 bd and the first semiconductor layer 201a.

According to some example embodiments, the channel layer 253 may fill aportion of an inner space defined by the gate insulating film 251. Thechannel layer 253 formed on an inner wall of the gate insulating film251 may have a constant or substantially constant thickness. Accordingto some example embodiments, a buried insulating film 255 may be filledin a space defined by the channel layer 253. An upper surface of theburied insulating film 255 may be covered by an upper portion of thechannel layer 253. According to some example embodiments, the upperportion of the channel layer 253 may have a greater thickness than asidewall of the channel layer 253 to form a contact with the first bitline contact via 271. According to some example embodiments, an uppersurface of the channel layer 253 may serve as a contact pad for thefirst bit line contact via 271.

According to some example embodiments, a word line cut (WLC) maypenetrate the first and second upper insulating films 261 and 263, thegate electrodes 240 and/or the insulating films 230 in the firstdirection (the Z direction). The word line cut (WLC) may extend in thesecond direction (the X direction). A length of the word line cut (WLC)in the second direction (the X direction) may be greater than a lengthof the gate electrodes 240 in the second direction (the X direction).According to some example embodiments, the word line cut (WLC) mayextend in the second direction (the X direction) to separate the gateelectrodes 240 in a horizontal direction (e.g., the third direction (theY direction)). Thus, the gate electrodes 240 horizontally spaced apartfrom each other may act as gates of different transistors.

According to some example embodiments, the word line cut (WLC) maypenetrate the second and third semiconductor layers 201 b and 201 c.According to some example embodiments, the word line cut (WLC) mayextend to an upper portion of the first semiconductor layer 201 a.According to some example embodiments, some of the word line cut (WLC)may extend in the first direction (the Z direction) to penetrate theopening 201 op formed in the third semiconductor layer 201 c.Accordingly, some of the word line cut (WLC) may be covered by thesupport connection structure 201 b 1 and thus may be spaced apart fromthe third semiconductor layer 201 c. Here, some of the word line cut(WLC) being spaced apart from the third semiconductor layer 201 c maymean that some of the word line cut (WLC) may not penetrate the thirdsemiconductor layer 201 c. Alternatively, the fact that some of the wordline cut (WLC) may be spaced apart from the third semiconductor layer201 c may mean that the third upper insulating film 265 filling some ofthe word line cut (WLC) may not be in contact with the thirdsemiconductor layer 201 c with the second semiconductor layer 201 btherebetween.

A string selection line cut (SLC) may extend in the first direction (theZ direction). According to some example embodiments, the stringselection line cut (SLC) may penetrate uppermost and second-uppermostgate electrodes 240 (SE) in the first direction (the Z direction). Alength in the second direction (the X direction) of the string selectionline cut (SLC) may be greater than a length in the second direction (theX direction) of the uppermost and second-uppermost gate electrodes 240(SE). Accordingly, the string selection line cut (SLC) may horizontallyseparate the uppermost and second-uppermost gate electrodes 240 (SE).According to some example embodiments, the first upper insulating film261 may fill a space defined by the string selection line cut (SLC). Thefirst upper insulating film 261 may insulate the uppermost andsecond-uppermost gate electrodes 240 (SE), which are spaced apart fromeach other at the same level (e.g., vertical level) or a similar levelin the second direction (the Y direction). Accordingly, the uppermostand second-uppermost gate electrodes 240 (SE) horizontally spaced apartfrom each other may act as gates of different transistors.

The third upper insulating film 265 may be disposed on the second upperinsulating film 263. The third upper insulating film 265 may include aninsulating material. According to some example embodiments, an inside ofthe word line cut (WLC) may be filled by the third upper insulating film265. Accordingly, the different gate electrodes 240 arranged at the samevertical level or a similar vertical level may be insulated from eachother by the third upper insulating film 265. According to some exampleembodiments, the first and second bit line contact vias 271 and 273 maybe covered by the third upper insulating film 265.

According to some example embodiments, the first and second bit linecontact vias 271 and 273 may extend in the first direction (the Zdirection). According to some example embodiments, the first bit linecontact via 271 may further penetrate the second upper insulating film263. According to some example embodiments, the first bit line contactvia 271 may be in contact with the channel layer 253.

According to some example embodiments, an upper conductive pattern 281may be arranged between the first and second bit line contact vias 271and 273. According to some example embodiments, the upper conductivepattern 281 may extend in the horizontal direction (e.g., the seconddirection (the X direction) and/or the third direction (the Ydirection)). According to some example embodiments, the upper conductivepattern 281 may be in contact with the first and second bit line contactvias 271 and 273. According to some example embodiments, the bit line BLmay be in contact with the second bit line contact via 273.

According to some example embodiments, the channel structures 250 may beconnected to the bit line BL via the first bit line contact via 271, theupper conductive pattern 281 and/or the second bit line contact via 273.

FIGS. 2 and 3 are flowcharts for explaining a method of manufacturing asemiconductor memory device according to some example embodiments.

FIGS. 4 to 13 are cross-sectional views for explaining a method ofmanufacturing a semiconductor memory device according to some exampleembodiments. In the discussion regarding FIGS. 4 to 13 below, the term“provide” may refer to providing, obtaining and/or forming.

Referring to FIGS. 2 and 4, the first semiconductor layer 201 a, thesacrificial semiconductor layer 202, and the second semiconductor layer201 b may be formed at P110. After providing the conductive flat plate200, the first semiconductor layer 201 a may be provided. The conductiveflat plate 200 and/or the first semiconductor layer 201 a may be formedby a chemical vapor deposition process, an atomic layer depositionprocess, a physical vapor deposition process, and/or the like.

The sacrificial semiconductor layer 202 may be provided on the firstsemiconductor layer 201 a and then a portion of the sacrificialsemiconductor layer 202 may be patterned to form the opening 201 op forpartially exposing a portion of the upper surface of the firstsemiconductor layer 201 a. According to some example embodiments, theopening 201 op may extend in the second direction (the X direction), butis not limited thereto. Then, the second semiconductor layer 201 b maybe provided conformally over the first semiconductor layer 201 a and thesacrificial semiconductor layer 202. The second semiconductor layer 201b may include the support connection structure 201 b 1 in contact withthe first semiconductor layer 201 a at the opening 201 op. According tosome example embodiments, the first and second semiconductor layers 201a and 201 b may include doped polysilicon.

According to some example embodiments, the sacrificial semiconductorlayer 202 may include an insulating material. According to some exampleembodiments, the sacrificial semiconductor layer 202 may include any onefrom among silicon oxide, silicon nitride, and/or silicon oxynitride.According to some example embodiments, the sacrificial semiconductorlayer 202 may have a high etch selectivity with respect to theinsulating films 230 (see FIG. 5) described below.

Referring to FIGS. 2 and 5, the insulating films 230 and the sacrificialfilms 220 may be provided at P120.

According to some example embodiments, the sacrificial films 220 and theinsulating films 230 may be alternately stacked on the secondsemiconductor layer 201 b. According to some example embodiments, theinsulating films 230 and the sacrificial films 220 may include differentmaterials. According to some example embodiments, the insulating films230 and the sacrificial films 220 may each have a high etch selectivitywith respect to each other. For example, when the sacrificial films 220include silicon oxide, the insulating films 230 may include siliconnitride. As another example, when the sacrificial films 220 includesilicon nitride, the insulating films 230 may include silicon oxide. Asanother example, when the sacrificial films 220 include undopedpolysilicon, the insulating films 230 may include silicon nitride orsilicon oxide.

Referring to FIGS. 2 and 6, the first upper insulating film 261 may beprovided at P130.

Providing the first upper insulating film 261 may include forming thestring selection line cut (SLC), providing an insulating material, andthen planarizing the insulating material. According to some exampleembodiments, the string selection line cut (SLC) may be formed by a dryetching process so that two layers of the sacrificial films 220 locatedfarthest from the second semiconductor layer 201 b are horizontallyseparated from each other. Subsequently, after providing the insulatingmaterial sufficiently to fill the string selection line cut (SLC), theprovided insulating material may be planarized to form the first upperinsulating film 261.

Referring to FIGS. 2, 7A, and 7B, the channel structures 250 may beformed at P140. Here, FIG. 7B is a partial enlarged cross-sectional viewof E2 of FIG. 7A. In order to form the channel structures 250, afterproviding a photoresist material layer on the insulating films 230 andthe sacrificial films 220 alternately stacked, an exposure anddevelopment process and an etching process may be sequentially performedto form channel holes penetrating the upper insulating film 261, astacked structure of the sacrificial films 220 and the insulating films230, the second semiconductor layer 201 b, the sacrificial semiconductorlayer 202, and/or an upper portion of the first semiconductor layer 201a.

Then, a gate insulating material film, a channel material film, and/or aburied insulating material film, which each fill at least a portion ofthe channel holes, may be sequentially and conformally provided.According to some example embodiments, the gate insulating material filmmay include a charge blocking material film, a charge storage materialfilm, and a tunnel insulating material film which are sequentiallyprovided. And then, by performing an etch back process, an upper surfaceof the first upper insulating film 261 may be exposed. Next, afterfurther removing an upper portion of the buried insulating material filmin the channel holes, the same material as or a similar material to thechannel material film may be deposited so as to cover an upper portionof the buried insulating film 255. Accordingly, a kind of pad forcontact with the first bit line contact via 271 (see FIG. 1A) may beformed.

Accordingly, the channel structures 250 including the gate insulatingfilm 251, the channel layer 253, and the buried insulating film 255 maybe formed. The gate insulating film 251 may include the tunnelinsulating film 251 a, the charge storage film 251 b, and the chargeblocking film 251 c.

Referring to FIGS. 2 and 8, the word line cut (WLC) may be formed atP150. According to some example embodiments, the second upper insulatingfilm 263 covering the upper surface of the channel structures 250 and anupper surface of the first upper insulating film 261, and a hard maskpattern may be sequentially provided on the result of FIG. 7B, and thenthe second and first upper insulating films 263 and 261, the sacrificialfilms 220 and the insulating films 230, the second semiconductor layer201 b, the sacrificial semiconductor layer 202, and/or the firstsemiconductor layer 201 a may be etched by using the hard mask patternas an etch mask.

After forming the word line cut (WLC), the hard mask pattern may beremoved. According to some example embodiments, the word line cut (WLC)may include a tapered shape in the first direction (the Z direction).According to some example embodiments, a length of the word line cut(WLC) in the second direction (the X direction) may be longer than alength of each of the sacrificial films 220 in the second direction (theX direction). Accordingly, the word line cut (WLC) may horizontallyseparate the sacrificial films 220 from each other.

According to some example embodiments, some of the word line cuts (WLCs)may vertically overlap with the opening 201 op. According to someexample embodiments, some of the word line cuts (WLCs) may extendthrough the opening 201 op in the first direction (the Z direction).Accordingly, according to some example embodiments, some of the wordline cuts (WLCs) may penetrate the support connection structure 201 b 1and may not contact the sacrificial semiconductor layer 202.

Referring to FIGS. 2, 8, 9A and 9B, the sacrificial semiconductor layer202 may be removed at P160. Here, FIG. 9B is a partial enlargedcross-sectional view of an E3 of FIG. 9A.

According to some example embodiments, after providing a word line cutliner material layer on a structure in which the word line cut (WLC) isformed, a portion of the word line cut liner material layer may beremoved to expose at least a portion of the sacrificial semiconductorlayer 202 located at a lower portion of the world line cut (WLC),thereby forming a word line cut liner (WLCL). The word line cut liner(WLCL) may include a material having a high etch selectivity withrespect to the sacrificial semiconductor layer 202. The word line cutliner (WLCL) may expose the sacrificial semiconductor layer 202, whilecovering the sacrificial films 220. The word line cut liner (WLCL) mayact as a layer for protecting the sacrificial films 220 in a process ofremoving the sacrificial semiconductor layer 202.

Since the first semiconductor layer 201 a may be connected to the secondsemiconductor layer 201 b via the support connection structure 201 b 1,even when the sacrificial semiconductor layer 202 may be removed, theinsulating films 230 and the sacrificial films 220 may be prevented fromcollapsing or the occurrence of collapse may be reduced.

A space formed by removing the sacrificial semiconductor layer 202 maybe referred to as a side opening (LO). After removing the sacrificialsemiconductor layer 202, the word line cut liner (WLCL) may be removed.

Referring to FIGS. 2, 3 and 10A to 11B, the third semiconductor layermay be formed at P170. Here, FIGS. 10A to 10D are partialcross-sectional views corresponding to E3 in FIG. 9A.

The formation of the third semiconductor layer at P170 may include theoperations of etching the charge blocking film 251 c (see FIG. 9B) atP171, depositing (e.g., forming) a cover material film 251 bc at P173,etching the cover material film 251 bc and the charge storage film 251 bat P175, etching the tunnel insulating film 251 a at P177, and thenproviding the third semiconductor layer 201 c at P179.

More specifically, referring to FIGS. 3 and 10A, the charge blockingfilm 251 c (see FIG. 9B) may be etched at P171.

According to some example embodiments, the charge blocking film 251 c(see FIG. 9B) may be wet etched. According to some example embodiments,the charge blocking film 251 c (see FIG. 9B) may be partially etched byan etchant, which has a low etch rate with respect to the charge storagefilm 251 b and has a high etch rate with respect to the charge blockingfilm 251 c (see FIG. 9B). Accordingly, the charge blocking film 251 c(see FIG. 9B) may be separated to form the upper and lower chargeblocking films 251 cu and 251 cd. A side opening LO (see FIG. 9A) may beenlarged by etching the charge blocking film 251 c (see FIG. 9B) to forma first side opening LOa. The upper and lower charge blocking films 251cu and 251 cd may be formed by an wet etching process, and thus may havea round profile on each of bottom surfaces of the upper and lower chargeblocking films 251 cu and 251 cd, but are not limited thereto.

Referring to FIGS. 3 and 10B, the cover material film 251 bc may beprovided at P173. According to some example embodiments, the covermaterial film 251 bc may include, but is not limited thereto, the samematerial as or a similar material to the charge storage film 251 b.According to some example embodiments, when the cover material film 251bc and the charge storage film 251 b include the same material or asimilar material, the cover material film 251 bc may be integrated in abody so that the charge storage film 251 b and the cover material film251 bc constitute a continuous structure. According to some exampleembodiments, the cover material film 251 bc may cover the upper andlower charge blocking films 251 cu and 251 cd. According to some exampleembodiments, the cover material film 251 bc may be provided by variousmethods such as a chemical vapor deposition method, an atomic layerdeposition method, and the like. According to some example embodiments,by providing the cover material film 251 bc, the first side opening LOain FIG. 10A may reduce to form a second side opening LOb.

Referring to FIGS. 3, 10B and 10C, portions of the cover material film251 bc and the charge storage film 251 b may be etched at P175.

According to some example embodiments, the cover material film 251 bcand the charge storage film 251 b may be etched by the wet etchingprocess. According to some example embodiments, the cover material film251 bc and the charge storage film 251 b may be partially removed byusing an etchant that has a low etch rate with respect to the tunnelinsulating film 251 a and has a high etch rate with respect to the covermaterial film 251 bc and the charge storage film 251 b. Accordingly, theupper charge storage film 251 bu including the upper cover 251 buc andthe lower charge storage film 251 bd including the lower cover 251 bdcmay be formed. According to some example embodiments, by etching thecharge storage film 251 b, the second side opening LOb may expand toform a third side opening LOc.

Referring to FIGS. 3, 10C and 10D, the tunnel insulating film 251 a maybe etched at P177.

According to some example embodiments, the tunnel insulating film 251 amay be wet etched. According to some example embodiments, the tunnelinsulating film 251 a may be partially removed by using an etchant thathas a low etch rate with respect to the upper and lower charge storagefilms 251 bu and 251 bd and has a high etch rate with respect to thetunnel insulating film 251 a. Accordingly, the tunnel insulating film251 a may be separated to form the upper and lower tunnel insulatingfilms 251 au and 251 ad. According to some example embodiments, byetching the tunnel insulating film 251 a, the third side opening LOc mayexpand to form a fourth side opening LOd.

In the conventional art, the charge blocking film is doubly etched inthe etching processes of the charge blocking film and the tunnelinsulating film, and resulting in an excessive process distribution.Particularly, according to the process distributions in the processes ofetching the upper and lower charge blocking films, the upper and lowercharge storage films and the upper and lower tunnel insulating films, aparasitic transistor may be generated and may act as a switch deviceblocking a current path between the third semiconductor layer and thechannel layer, resulting in a less reliable semiconductor device.

According to some example embodiments, since the upper and lower covers251 buc and 251 bdc covering the upper and lower charge blocking films251 cu and 251 cd may be formed before the tunnel insulating film 251 ais etched, and the upper and lower charge blocking films 251 cu and 251cd may be prevented from being doubly etched or reduce the extent orinstance in which the upper and lower charge blocking films 251 cu and251 cd are doubly etched. According to some example embodiments,therefore, the process distributions in the etching processes of aplurality of layers constituting the gate insulating film 251 may becontrolled, and thus the reliability of the semiconductor memory device10 (see FIG. 1A) may be improved.

Referring to FIGS. 3, 11A and 11B, the third semiconductor layer 201 cmay be provided at P179. Here, FIG. 11B is a partial cross-sectionalview corresponding to E4 in FIG. 11A.

The third semiconductor layer 201 c may be provided in a space formed byselectively removing the sacrificial semiconductor layer 202 (see FIG.7A). According to some example embodiments, the third semiconductorlayer 201 c may include polysilicon doped at the same or substantiallythe same concentration as the first and second semiconductor layers 201a and 201 b. According to some example embodiments, the thirdsemiconductor layer 201 c may include polysilicon doped at a differentconcentration than the first and second semiconductor layers 201 a and201 b, or undoped polysilicon. According to some example embodiments,the third semiconductor layer 201 c may include the same orsubstantially the same concentration as the first and secondsemiconductor layers 201 a and 201 b through a diffusion of dopantscontained in the first and second semiconductor layers 201 a and 201 bby a subsequent heat treatment process, but is not limited thereto. Thenewly formed third semiconductor layer 201 c and the channel layer 253may be in contact with each other. Accordingly, the channel structures250 may be a charge transfer path for operating as a memory cell.

According to some example embodiments, since the third semiconductorlayer 201 c may fill the space formed by removing the sacrificialsemiconductor layer 202 (see FIG. 7A), the opening 201 op partiallyexposing the upper surface of the first semiconductor layer 201 a mayalso be maintained.

Referring to FIGS. 2, 12A, and 12B, a gate electrode material layer(EML) may be provided at P180. Here, the sacrificial films 220 may beremoved before the gate electrode material layer EML is provided. Here,FIG. 12B is a partial cross-sectional view corresponding to E5 in FIG.12A.

The gate electrode material layer EML may include a first barriermaterial layer 241L corresponding to the first barrier layer 241, asecond barrier material layer 242L corresponding to the second barrierlayer 242, and a gate conductive material layer 243L corresponding tothe gate conductive layer 243, in sequence (see FIG. 1B). The firstbarrier material layer 241L may include aluminum oxide, the secondbarrier material layer 242L may include titanium nitride, and the gateconductive material layer 243L may include tungsten, but are not limitedthereto.

Referring to FIGS. 2, 12A, and 13, the third upper insulating film 265may be provided after performing a node isolation process at P190.

The node isolation process may be a process of removing a portion of theexposed gate electrode material layer EML through the wet etchingprocess. Accordingly, the gate electrode material layer EML formed onthe different layers may be separated to form a plurality of gateelectrodes 240. Then, the third upper insulating film 265 filling theword line cut WLC and covering an upper surface of the second upperinsulating film 263 may be provided. The gate electrodes 240horizontally separated from each other at the same vertical level orsimilar vertical levels may be insulated from each other by the thirdupper insulating film 265.

Then, referring again to FIG. 1A, by performing further some wiringprocesses, the upper conductive pattern 281, the first and second bitline contact vias 271 and 273, and the bit line BL may be furtherformed. Accordingly, the semiconductor memory device 10 may be provided.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. For example, as used herein,the terms “upper,” “higher,” “on” and/or “top” may refer to an elementor feature further in the Z direction (as depicted in FIG. 1A) withrespect to another element or feature, and the terms “lower” and/or“below” may refer to an element or feature further in a directionopposite the Z direction with respect to another element or feature. Itwill be understood that the spatially relative terms are intended toencompass different orientations of the device in use or operation inaddition to the orientation depicted in the figures. For example, if thedevice in the figures is turned over, elements described as “below” or“beneath” other elements or features would then be oriented “above” theother elements or features. Thus, the terms “below” can encompass bothan orientation of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein interpreted accordingly. Likewise, the term“cover” may describe a relationship a first element or feature is eitherabove or below a second element or feature.

It will be understood that when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. As used herein the term “and/or” includes any and allcombinations of one or more of the associated listed items. Also, asused herein, the term “fill” may describe partially or completelyfilling, and the term “cover” may describe partially or completelycovering.

Some example embodiments are described herein with reference tocross-sectional illustrations that are schematic illustrations ofidealized examples. As such, variations from the shapes of theillustrations as a result, for example, of manufacturing techniquesand/or tolerances, are to be expected. Thus, some example embodimentsshould not be construed as limited to the particular shapes of regionsillustrated herein but are to include deviations in shapes that result,for example, from manufacturing.

While some example embodiments have been particularly shown anddescribed, it will be understood that various changes in form anddetails may be made therein without departing from the spirit and scopeof the following claims.

What is claimed is:
 1. A method of manufacturing a semiconductor memorydevice, the method comprising: forming a first semiconductor layer, asacrificial semiconductor layer, and a second semiconductor layer;alternately providing insulating films and sacrificial films on thesecond semiconductor layer; forming channel structures penetrating theinsulating films and the sacrificial films, each of the channelstructures including a tunnel insulating film, a charge storage film onthe tunnel insulating film, and a charge blocking film on the chargestorage film; forming word line cuts to horizontally separate theinsulating films and the sacrificial films; removing the sacrificialsemiconductor layer through the word line cuts; etching a portion of thecharge blocking film of each of the channel structures to form an uppercharge blocking film and a lower charge blocking film separated fromeach other; and forming a cover material film on each of the channelstructures covering the upper charge blocking film and the lower chargeblocking film.
 2. The method of manufacturing the semiconductor memorydevice of claim 1, wherein the cover material film comprises a samematerial as the charge storage film.
 3. The method of manufacturing thesemiconductor memory device of claim 1, wherein the cover material filmand the charge storage film are integrated in a body so that the chargestorage film and the cover material film constitute a continuousstructure.
 4. The method of manufacturing the semiconductor memorydevice of claim 1, wherein the cover material film comprises siliconnitride.
 5. The method of manufacturing the semiconductor memory deviceof claim 1, further comprising: etching the cover material film and thecharge storage film of each of the channel structures.
 6. The method ofmanufacturing the semiconductor memory device of claim 5, wherein theetching of the cover material film and the charge storage film of eachof the channel structures results in formation of an upper chargestorage film including an upper cover protruding toward the outside ofthe respective channel structure and a lower charge storage filmincluding a lower cover protruding toward the outside of the respectivechannel structure.
 7. The method of manufacturing the semiconductormemory device of claim 6, wherein the upper cover covers the uppercharge blocking film and the lower cover covers the lower chargeblocking film.
 8. The method of manufacturing the semiconductor memorydevice of claim 1, further comprising: etching the tunnel insulatingfilm of each of the channel structures.
 9. The method of manufacturingthe semiconductor memory device of claim 8, wherein the upper chargeblocking film and the lower charge blocking film are not etched duringthe etching of the tunnel insulating film.
 10. The method ofmanufacturing the semiconductor memory device of claim 9, wherein theupper charge blocking film, the lower charge blocking film and thetunnel insulating film include silicon oxide.
 11. A method ofmanufacturing a semiconductor memory device, the method comprising:forming a first semiconductor layer, a sacrificial semiconductor layer,and a second semiconductor layer; alternately stacking insulating filmsand sacrificial films on the second semiconductor layer; forming channelstructures penetrating the insulating films and the sacrificial films,each of the channel structures including a gate insulating film, achannel layer, and a buried insulating film; forming word line cuts tohorizontally separate the insulating films and the sacrificial films;forming a side opening exposing a lower portion of the gate insulatingfilm of each the of the channel structures by removing the sacrificialsemiconductor layer through the word line cuts; forming a first sideopening by expanding the side opening; and forming a second side openingby partially filling the first side opening.
 12. The method ofmanufacturing the semiconductor memory device of claim 11, wherein theforming of the first side opening includes etching silicon oxide. 13.The method of manufacturing the semiconductor memory device of claim 11,wherein the forming of the second side opening includes depositingsilicon nitride.
 14. The method of manufacturing the semiconductormemory device of claim 11, further comprising: forming a third sideopening by expanding the second side opening.
 15. The method ofmanufacturing the semiconductor memory device of claim 14, wherein theforming of the third side opening includes etching silicon nitride. 16.The method of manufacturing the semiconductor memory device of claim 14,further comprising: forming a fourth side opening by expanding the thirdside opening.
 17. The method of manufacturing the semiconductor memorydevice of claim 16, wherein the forming of the fourth side openingincludes etching silicon oxide.
 18. The method of manufacturing thesemiconductor memory device of claim 16, wherein the fourth side openingexposes a lower portion of the channel layer of each the of the channelstructures.
 19. The method of manufacturing the semiconductor memorydevice of claim 16, further comprising: forming a third semiconductorlayer in contact with the channel layer in the fourth side opening. 20.A method of manufacturing a semiconductor memory device, the methodcomprising: forming a first semiconductor layer, a sacrificialsemiconductor layer, and a second semiconductor layer; alternatelyproviding insulating films and sacrificial films on the secondsemiconductor layer; forming channel structures penetrating theinsulating films and the sacrificial films, each of the channelstructures including a tunnel insulating film, a charge storage film onthe tunnel insulating film, and a charge blocking film on the chargestorage film; forming word line cuts to horizontally separate theinsulating films and the sacrificial films; removing the sacrificialsemiconductor layer through the word line cuts; etching a portion of thecharge blocking film of each of the channel structures to form an uppercharge blocking film and a lower charge blocking film separated fromeach other; and forming an upper charge storage film including an uppercover protruding toward the outside of the respective channel structureand a lower charge storage film including a lower cover protrudingtoward the outside of the respective channel structure, wherein theupper cover covers the upper charge blocking film and the lower covercovers the lower charge blocking film.